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Author:

Wang, BB (Wang, BB.) | Lee, S (Lee, S.) | Wang, WL (Wang, WL.) | Liao, KJ (Liao, KJ.) | Yan, H (Yan, H.)

Indexed by:

CPCI-S Scopus SCIE

Abstract:

Carbon nanotips were grown on a silicon substrate by negative bias-enhanced hot filament chemical vapor deposition without catalyst, using a mixture of methane, ammonia and hydrogen as the reaction gases. It was evidenced that the plasma caused by the bias played a key role in the formation of the carbon nanotips. Due to occurrence of plasma during growing carbon nanotips, the gases were ionized into various ions. Based on different effects of the ions, a growth mechanism of the carbon nanotips was put forward.

Keyword:

carbon nanotips negative bias etching

Author Community:

  • [ 1 ] Beijing Univ Technol, Coll Appl Math & Phys, Beijing 100022, Peoples R China
  • [ 2 ] Beijing Univ Technol, Quantum Mat Lab, Beijing 100022, Peoples R China
  • [ 3 ] Ajou Univ, Dept Mol Sci & Technol, Suwon 442749, South Korea
  • [ 4 ] Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China

Reprint Author's Address:

  • [Wang, BB]Beijing Univ Technol, Coll Appl Math & Phys, Beijing 100022, Peoples R China

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Source :

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

ISSN: 0217-9792

Year: 2005

Issue: 1-3

Volume: 19

Page: 647-650

1 . 7 0 0

JCR@2022

ESI Discipline: PHYSICS;

JCR Journal Grade:4

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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