With　CF4　addition,　crystalline　3C-SiC　films　were　synthesized　at　a　low　substrate　temperature　of　480degreesC　by　hot　filament　chemical　vapor　deposition　with　CH4-SiH4-H-2　gas　mixture.　It　was　observed　that　the　full-width　at　half-maximum　of　both　vibration　peaks　of　Si-C　bonds　in　Fourier　transform　infrared　spectra　and　3C-SiC　(1　1　1)　peaks　in　X-ray　diffraction　patterns　decreased　evidently　as　the　flux　of　CF4　increased.　The　results　imply　that　the　crystallinity　of　the　films　can　be　improved　by　adding　CF4.　Moreover,　the　micrographs　of　atomic　force　microscopy　showed　that　the　surface　of　the　SiC　films　became　rougher　with　the　flux　of　CF4　increasing,　which　is　resulted　from　the　larger　grains　of　the　SiC　films.　(C)　2004　Elsevier　B.V.　All　rights　reserved.