This　letter　reports　that,　by　applying　a　bias　to　Si　substrates,　crystalline　tantalum　pentoxide　(Ta2O5)　thin　films　were　fabricated　at　low　substrate　temperatures.　At　620　degreesC,　it　was　found　that　the　thin　films　as-prepared　are　amorphous　without　the　bias　and　of　high　crystallinity　with　the　bias　over　-100　V.　Based　on　the　present　data,　it　is　concluded　that　the　crystallinity　of　the　thin　films　is　improved　with　increasing　bias.　Furthermore,　when　the　bias　was　increased　to　-200　V,　partially　crystallized　films　could　be　attained　at　temperatures　as　low　as　400　degreesC.　The　bias　effect　on　the　crystallization　is　attributed　to　the　interaction　of　positive　ions　in　the　plasma　with　the　growing　surface.　(C)　2003　American　Institute　of　Physics.