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Author:

李玮 (李玮.) | 武伟 (武伟.) | 秦飞 (秦飞.) (Scholars:秦飞)

Abstract:

在TSV制作工艺中,绝缘层SiO2的存在可以防止后形成的导电材料(如铜)扩散入衬底,从而提高芯片的电学可靠性和稳定性。但其存在使得TSV整体建模较为复杂。本文对包含和不包含SiO2层两种模型进行了热应力计算,发现SiO2的存在对铜孔和硅板的应力影响很小,因此在整体建模中,为了简化模型,提高运算速率,可以忽略SiO2层。

Keyword:

SiO_2层 TSV 热应力

Author Community:

  • [ 1 ] 北京工业大学机械工程与应用电子技术学院力学系

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Year: 2012

Language: Chinese

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 11

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