Junction Temperature measurement of SiC BJT via the voltage drop of V-BC - Details

Author：

Shi, Bang-Bing (Shi, Bang-Bing.) | Feng, Shi-Wei (Feng, Shi-Wei.) (Scholars：冯士维) | He, Quan-Bo (He, Quan-Bo.) | Zhang, Ya-Min (Zhang, Ya-Min.) | Bai, Kun (Bai, Kun.)

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CPCI-S

Abstract：

In　this　paper,　an　electrical　method　for　junction　temperature　estimation　of　Silicon　Carbide　Bipolar　Junction　Transistor　(SiC　BJT)　is　presented.　The　measurement　method　is　based　on　the　measurement　of　the　voltage　drop　of　Vac　at　low　current　(Vtic　(tio)　during　turn-off,　This　voltage　is　proportional　to　temperature　due　to　the　temperature-dependence　of　the　base-collector　PN　junction.　This　voltage　has　superior　sensitivity　and　linearity　to　temperature　reaching　almost　250　degrees　C.

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Author Community：

[ 1 ] [Shi, Bang-Bing]Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China
[ 2 ] [Feng, Shi-Wei]Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China
[ 3 ] [He, Quan-Bo]Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China
[ 4 ] [Zhang, Ya-Min]Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China
[ 5 ] [Bai, Kun]Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China

Reprint Author's Address：

冯士维
[Feng, Shi-Wei]Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China

Email：

shwfeng@bjut.edu.cn

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Source ：

2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)

Year： 2018

Page： 531-533

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 6

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

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