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Author:

Shi Ge (Shi Ge.) | Bie Xiaorui (Bie Xiaorui.) | An Tong (An Tong.) | Qin Fei (Qin Fei.) (Scholars:秦飞)

Indexed by:

CPCI-S

Abstract:

As the demand expanding for high electrical performance, high pin count and low cost, the copper pillar bump packaging has been extensively used in recent years. However, the drawback is that copper pillar bump can introduce high stress, especially on low-k chip. In this paper, finite element method was adopted to optimize the structure of copper pillar bump, aiming at relieving the stress of low-k layer during reflow process and improving the reliability of electronic packages. A strip finite element model was established. Then, the copper pillar bump structure factors, such as the thickness of die, die size, the diameter of copper pillar etc., were separately analyzed by finite element method. Taguchi experiments were carried out to analyze the significant structure factors which we got before, and a L-27(3(8)) orthogonal array was established. Finally, we got the significance of these important structure factors and their optimal combination.

Keyword:

optimization FEM Copper pillar bump low-k dielectric

Author Community:

  • [ 1 ] [Shi Ge]Beijing Univ Technol, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Bie Xiaorui]Beijing Univ Technol, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [An Tong]Beijing Univ Technol, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Qin Fei]Beijing Univ Technol, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 秦飞

    [Qin Fei]Beijing Univ Technol, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China

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Source :

2016 17TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT)

Year: 2016

Page: 1108-1111

Language: English

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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