The　rapid　development　of　gallium　nitride　(GaN)-based　wide　bandgap　power　devices　has　been　stirring　power　electronics　industry　for　almost　a　decade.　Advanced　packaging　solutions　are　eagerly　needed　to　exploit　the　maximum　potential　of　the　high　performance　GaN　semiconductors.　Especially　for　devices　in　the　cascode　configuration,　the　design　and　fabrication　of　a　suitable　package　are　very　challenging　for　high-frequency,　high-efficiency　applications.　In　this　study　a　new　wirebond-less　package　has　been　developed　for　a　650　V,　cascode　GaN　device　to　address　the　parasitics　and　reliability　concerns　induced　by　the　bonding　wires　used　in　the　conventional　package.　The　simulated　junction-to-case　thermal　performance　and　measured　switching　characteristics　for　GaN　device　packaged　in　this　new　format　are　reported　and　compared　with　the　device　in　the　previously　developed　stack-die　package.　This　wirebond-less　package　demonstrates　a　lower　thermal　resistance　than　most　of　the　packages　used　for　commercial　power　GaN　devices.　And　its　footprint/size　is　smaller　than　the　state-of-the-art　packaging　format　utilized　for　silicon-based　power　devices.