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Author:

Yang, Yanhan (Yang, Yanhan.) | Chen, Xiaoqing (Chen, Xiaoqing.) | Tian, Nan (Tian, Nan.) | Zhang, Yongzhe (Zhang, Yongzhe.) (Scholars:张永哲) | Liu, Danmin (Liu, Danmin.) (Scholars:刘丹敏) | Yan, Hui (Yan, Hui.) (Scholars:严辉)

Indexed by:

EI Scopus SCIE

Abstract:

The quasi one-dimensional layered KP15 shows in-plane anisotropic electrical/optical properties and high carrier mobility. In this work, for the first time, its electrical/optical properties are studied by fabricating phototransistors based on mechanical exfoliated KP15 nanowires. The device shows high specific detectivity (>10(10) Jones throughout the visible band with peak value > 10(12) Jones) and fast response time (similar to 10 ms, shorter than most photodetectors based on 2D Mo or W sulfides). The excellent device performance suggests KP15 as a new candidate material for photonic and optoelectronic devices. (C) 2020 Elsevier B.V. All rights reserved.

Keyword:

Semiconductors KP15 Quasi one-dimensional Field effect transistor Photodetector Electrical properties

Author Community:

  • [ 1 ] [Yang, Yanhan]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Chen, Xiaoqing]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Zhang, Yongzhe]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Yan, Hui]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Yang, Yanhan]Xian Univ Posts & Telecommun, Xian 710121, Peoples R China
  • [ 6 ] [Tian, Nan]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 7 ] [Liu, Danmin]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 张永哲 刘丹敏

    [Chen, Xiaoqing]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China;;[Zhang, Yongzhe]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China;;[Liu, Danmin]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China

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Source :

MATERIALS LETTERS

ISSN: 0167-577X

Year: 2020

Volume: 272

3 . 0 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:169

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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