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Abstract：
We have investigated different growth conditions of AlGaAs and InGaAs quantum wells (QWs) by metal organic chemical vapor deposition (MOCVD) for applications in high-power laser diodes emitting at 980nm. According to different experimental results measured by Photoluminescence (PL), we optimized the growth conditions. Growth temperature, V/III ratio, growth interruption and spacer time have been studied in detail. We have found the optimal growth conditions for laser diodes emitting at 980nm grown by metal organic chemical vapor deposition (MOCVD). As for our experiments, the best suitable growth temperature of AlGaAs and InGaAs QWs was 700 degrees C and 600 degrees C, respectively. The growth procedure of laser diodes should include growth interruption and spacer layers surrounding QWs. V/III ratio was about 130 during the growth of QWs.
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INTERNATIONAL SYMPOSIUM ON PHOTONICS AND OPTOELECTRONICS 2014
ISSN： 0277-786X
Year： 2014
Volume： 9233
Language： English
Cited Count：
WoS CC Cited Count： 0
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 7
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