The　leakage　current,　active　power　and　delay　characterizations　of　the　domino　circuits　in　the　presence　of　P-V-T　(Process,　Voltage,　and　Temperature)　variations　are　analyzed　based　on　multiple-parameter　Monte　Carlo　method.　It　is　demonstrated　that　failing　to　account　for　P-V-T　variations　and　process-electro-thermal　couplings　can　result　in　significant　inaccuracy　in　transistor-level　performance　estimation.　It　also　indicates　that　under　significant　P-V-T　variations,　DTV　(Dual　V-t　Technology)　is　still　highly　effective　to　reduce　the　leakage　current　and　active　power　for　domino　circuits,　but　induces　speed　penalty.　At　last,　the　robustness　of　different　domino　circuits　with　DTV　against　the　P-V-T　variations　is　discussed.