Vanadium　dioxide　(VO2)　attracts　great　attention　due　to　its　well-known　metal-to-insulator　transition.　However,　traditional　VO(2)films　grown　on　rigid　substrates　are　inflexible,　which　limits　their　applications.　In　this　work,　we　successfully　prepared　VO2/silicon　nitride　(VO2/SN)　composite　films　by　a　simple　template　method.　The　VO2/SN　film　shows　high　flexibility,　strong　infrared　absorption,　and　drastic　resistance　change　(＞10(3))　induced　by　the　phase　transition.　The　application　of　the　VO2/SN　film　is　presented　by　infrared　sensing,　which　shows　a　high　responsivity　(720　V　W-1)　and　short　response　time　(409　ms).