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Author:

Yan, Wenjie (Yan, Wenjie.) | Lv, Chengzhai (Lv, Chengzhai.) | Zhang, Duan (Zhang, Duan.) | Chen, Yanhui (Chen, Yanhui.) | Zhang, Lei (Zhang, Lei.) | Coileain, Cormac O. (Coileain, Cormac O..) | Wang, Zhi (Wang, Zhi.) | Jiang, Zhaotan (Jiang, Zhaotan.) | Hung, Kuan-Ming (Hung, Kuan-Ming.) | Chang, Ching-Ray (Chang, Ching-Ray.) | Wu, Han-Chun (Wu, Han-Chun.)

Indexed by:

EI Scopus SCIE PubMed

Abstract:

Layered materials are highly attractive in gas sensor research due to their extraordinary electronic and physicochemical properties. The development of cheaper and faster room-temperature detectors with high sensitivities especially in the parts per billion level is the main challenge in this rapidly developing field. Here, we show that sensitivity to NO2 (S) can be greatly improved by at least two orders of magnitude using an n-type electrode metal. Unconventionally for such devices, the In(S) follows the classic Langmuir isotherm model rather than S as is for a p-type electrode metal. Excellent device sensitivities, as high as 13,000% for 9 ppm and 97% for 1 ppb NO2, are achieved with Mn electrodes at room temperature, which can be further tuned and enhanced with the application of a bias. Long-term stability, fast recovery, and strong selectivity toward NO2 are also demonstrated. Such impressive features provide a real solution for designing a practical high-performance layered material-based gas sensor.

Keyword:

gas sensor electrical contacts Schottky barrier layered materials SnS2

Author Community:

  • [ 1 ] [Yan, Wenjie]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 2 ] [Lv, Chengzhai]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 3 ] [Wang, Zhi]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 4 ] [Jiang, Zhaotan]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 5 ] [Wu, Han-Chun]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 6 ] [Hung, Kuan-Ming]Natl Kaohsiung Univ Sci & Technol, Dept Elect Engn, Kaohsiung 807, Taiwan
  • [ 7 ] [Zhang, Duan]Capital Normal Univ, Elementary Educ Coll, Beijing Key Lab Nanophoton & Nanostruct, Beijing 100048, Peoples R China
  • [ 8 ] [Chen, Yanhui]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 9 ] [Zhang, Lei]Foshan Southern China Inst New Mat, Foshan 528000, Guangdong, Peoples R China
  • [ 10 ] [Coileain, Cormac O.]Trinity Coll Dublin, Sch Chem, CRANN, Dublin 2, Ireland
  • [ 11 ] [Coileain, Cormac O.]Trinity Coll Dublin, Sch Chem, AMBER, Dublin 2, Ireland
  • [ 12 ] [Chang, Ching-Ray]Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

Reprint Author's Address:

  • [Wu, Han-Chun]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China;;[Hung, Kuan-Ming]Natl Kaohsiung Univ Sci & Technol, Dept Elect Engn, Kaohsiung 807, Taiwan

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Source :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

Year: 2020

Issue: 23

Volume: 12

Page: 26746-26754

9 . 5 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:169

Cited Count:

WoS CC Cited Count: 56

SCOPUS Cited Count: 53

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 10

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