Abstract:
<正> 笔者曾在《电子技术应用》杂志74年第9期上介绍过Pd-MOS FET氢敏仪的基本原理和几种实际仪器电路.鉴于在大多数情况下,使用这类仪器的现场都对仪器提出防爆要求,而且常常是极严格的要求,本
Keyword:
Reprint Author's Address:
Email:
Source :
电子技术应用
Year: 1985
Issue: 07
Page: 17-34
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 1
Affiliated Colleges: