The　design　of　Si/SiGe　HBT　for　high-frequency　microwave　power　amplification　was　presented　in　this　paper.　The　material　profile　structure　of　the　device　was　designed.　A　comb　liked　structure　with　6-fingered　emitter　was　employed　for　the　SiGe　HBT.　Then　the　device　was　fabricated　by　using　the　buried　metal　self-aligned　double　mesa　process　and　high　resistivity　substrate　in　a　3　mu　m　manufacture　process　line.　The　tested　results　indicate　that　the　Si/SiGe　power　HBT　reaches　the　parameters　of　beta=26,　V-BC　＞=　10V,　I-CM　＞=　180mA　and　f(T)＞=　3.2GHz.