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Author:

Liu Bo (Liu Bo.) (Scholars:刘博) | Zhao Yudi (Zhao Yudi.) | Verma Dharmendra (Verma Dharmendra.) | Wang Le An (Wang Le An.) | Liang Hanyuan (Liang Hanyuan.) | Zhu Hui (Zhu Hui.) | Li Lain-Jong (Li Lain-Jong.) | Hou Tuo-Hung (Hou Tuo-Hung.) | Lai Chao-Sung (Lai Chao-Sung.)

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Abstract:

The implementation of two-dimensional materials into memristor architectures has recently been a new research focus by taking advantage of their atomic thickness, unique lattice, and physical and electronic properties. Among the van der Waals family, Bi2O2Se is an emerging ternary two-dimensional layered material with ambient stability, suitable band structure, and high conductivity that exhibits high potential for use in electronic applications. In this work, we propose and experimentally demonstrate a Bi2O2Se-based memristor-aided logic. By carefully tuning the electric field polarity of Bi2O2Se through a Pd contact, a reconfigurable NAND gate with zero static power consumption is realized. To provide more knowledge on NAND operation, a kinetic Monte Carlo simulation is carried out. Because the NAND gate is a universal logic gate, cascading additional NAND gates can exhibit versatile logic functions. Therefore, the proposed Bi2O2Se-based MAGIC can be a promising building block for developing next-generation in-memory logic computers with multiple functions.

Keyword:

RRAM CAFM MAGIC Bi2O2Se kinetic Monte Carlo

Author Community:

  • [ 1 ] [Liu Bo]Faculty of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People's Republic of China
  • [ 2 ] [Zhao Yudi]School of Information and Communication Engineering, Beijing Information Science & Technology University, Beijing 100101, China
  • [ 3 ] [Verma Dharmendra]Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan
  • [ 4 ] [Wang Le An]Faculty of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People's Republic of China
  • [ 5 ] [Liang Hanyuan]School of Electrical Engineering and Computer Science, The Pennsylvania State University, 207 Electrical Engineering West, University Park Pennsylvania 16801, United States
  • [ 6 ] [Zhu Hui]Faculty of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People's Republic of China
  • [ 7 ] [Li Lain-Jong]Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan
  • [ 8 ] [Hou Tuo-Hung]Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
  • [ 9 ] [Lai Chao-Sung]Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan

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Source :

ACS applied materials & interfaces

ISSN: 1944-8252

Year: 2021

Issue: 13

Volume: 13

Page: 15391-15398

9 . 5 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:116

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 17

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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