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Author:

Su, Ning (Su, Ning.) | Li, Pingxue (Li, Pingxue.) (Scholars:李平雪) | Lin, Nan (Lin, Nan.) | Yao, Chuanfei (Yao, Chuanfei.) | Xiong, Wenhao (Xiong, Wenhao.) | Dong, Xueyan (Dong, Xueyan.) | Yang, Min (Yang, Min.) | Ma, Xiaoyu (Ma, Xiaoyu.)

Indexed by:

EI Scopus SCIE

Abstract:

We report a linear-cavity mode-locked Yb-doped fiber laser using self-made semiconductor saturable absorber mirrors (SESAMs). The SESAMs are grown by means of metalorganic chemical vapor deposition, with a design of high modulation depth using strain-compensated multiple quantum wells. We choose two kinds of self-made SESAMs with different periods of top reflector in the linear cavity, and they can both be applied to stable mode-locking operation without damage. The output characteristics of the mode-locked oscillator indicate that SESAMs with high modulation depth are beneficial for mode-locked fiber lasers and the modulation depth can limit the pulse width of the output pulses. © 2021 Astro Ltd Printed in the UK

Keyword:

Laser mirrors Semiconductor quantum wells Mode-locked fiber lasers Quantum well lasers Passive mode locking Modulation Fiber lasers Metallorganic chemical vapor deposition Semiconductor saturable absorber mirrors

Author Community:

  • [ 1 ] [Su, Ning]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Li, Pingxue]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 3 ] [Lin, Nan]National Research Center for Optoelectronic Engineering, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100871, China
  • [ 4 ] [Yao, Chuanfei]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 5 ] [Xiong, Wenhao]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 6 ] [Dong, Xueyan]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 7 ] [Yang, Min]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 8 ] [Ma, Xiaoyu]National Research Center for Optoelectronic Engineering, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100871, China

Reprint Author's Address:

  • 李平雪

    [li, pingxue]institute of laser engineering, beijing university of technology, beijing; 100124, china

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Source :

Laser Physics

ISSN: 1054-660X

Year: 2021

Issue: 2

Volume: 31

1 . 2 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:72

JCR Journal Grade:4

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 14

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