In　high-temperature　reverse-bias　test　of　an　insulated-gate　bipolar　transistor　module,　the　problem　of　self-heating　in　chip　resulting　from　power　loss　arises　with　high　frequency.　To　address　this　problem,　the　law　of　the　variation　in　leakage　current　with　temperature　for　the　reverse-bias　state　of　a　device　is　derived　and　utilized　to　establish　a　temperature　calibration　curve,　with　which　the　online　measurement　of　the　insulate-gate　bipolar　transistor　module　chip　temperature　can　be　implemented　directly　by　real-time　monitoring　of　device　leakage　current　in　high-temperature　reverse-bias　test.　The　method　we　proposed　solves　the　problem　of　large　measurement　error　in　chip　temperature　obtained　by　traditional　thermal　resistance　calculation　method.　In　addition,　real-time　chip　temperature　can　be　monitored　without　introducing　additional　test　circuit　or　HTRB　interruption　experiment.　To　demonstrate　the　effectiveness　of　the　proposed　method,　the　switching　small-current　temperature　measurement　method　is　used　to　make　comparison,　and　the　experiment　result　indicates　that　the　temperature　of　the　chip　in　the　blocking　test　can　be　obtained　with　high　precision　by　using　the　leakage　current　measurement　method　presented　in　this　work.