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Abstract：
VCSELs using SiO2/Si3N4 dielectric DBRs are demonstrated. The devices operating near 894 nm have low threshold current of 0.3 mA, single-mode peak power of 2.15 mW, side-mode suppression ratio ＞30 dB under the full range of bias currents.
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2020 IEEE PHOTONICS CONFERENCE (IPC)
ISSN： 2374-0140
Year： 2020
Language： English
Cited Count：
WoS CC Cited Count： 0
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 11
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