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Author:

高迪 (高迪.) | 郑坤 (郑坤.) (Scholars:郑坤)

Abstract:

  所有材料都有压阻特性,然而不同于金属材料,半导体的压阻效应不仅源于尺寸的变化,而且更敏感于其半导体特性(能带的变化).自1954年硅压阻效应1被发现以来,这一领域的研究如火如荼,并基于此效应,硅的各种压敏传感器被广泛应用.随着材料尺寸的减小,它们的可承载的弹性应变大幅提高,比如硅体材料的应变极限一般小于0.1%,而微米或亚微米尺度的硅应变一般高于1%.

Keyword:

压阻效应 硅纳米线

Author Community:

  • [ 1 ] [高迪]北京工业大学固体微结构与性能研究所

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Source :

Year: 2016

Page: 1-2

Language: Chinese

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count: -1

Chinese Cited Count:

30 Days PV: 6

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