Flexible　optoelectronic　synaptic　devices　that　functionally　imitate　the　neural　behavior　with　tunable　optoelectronic　characteristics　are　crucial　to　the　development　of　advanced　bioinspired　neural　networks.　In　this　work,　amorphous　oxide-decorated　GaN　nanowire　arrays　(GaOx@GaN　NWAs)　are　prepared　on　flexible　graphite　paper.　A　GaOx@GaN　NWA-based　flexible　device　has　tunable　persistent　photoconductivity　(PPC)　and　shows　a　conversible　fast/slow　decay　process　(SDP).　Photoconductivity　can　be　modulated　by　single　or　double　light　pulses　with　different　illumination　powers　and　biases.　PPC　gives　rise　to　the　high-performance　SDP　such　as　a　long　decay　time　of　2.3　x　10(5)　s.　The　modulation　mechanism　is　proposed　and　discussed.　Our　results　reveal　an　innovative　and　efficient　strategy　to　produce　decorated　NWAs　on　a　flexible　substrate　with　tunable　optoelectronic　properties　and　exhibit　potential　for　flexible　neuromorphic　system　applications.