Exciton　dynamics　significantly　influences　the　performance　of　the　optoelectronic　devices,　which　is　intensively　studied　in　the　light-emitting　perovskite　of　CH3NH3PbBr3　(MAPbBr(3)).　However,　most　of　the　existing　investigations　have　focused　on　the　free　excitons.　In　this　study,　we　investigate　the　emissive　recombination　from　defect　states　in　MAPbBr(3)　using　temperature-and　excitation-dependent　photoluminescence　measurements.　It　is　revealed　that　two　emission　peaks　centered　at　about　550　and　590　nm　are　presented　at　temperatures　as　low　as　10　K,　instead　of　one　peak　at　535　nm　for　the　observation　at　room　temperature.　These　two　peaks　are　attributed　to　the　emission　of　bound　excitons　after　self-absorption　and　bulk　defects,　respectively.　It　is　found　that　the　distribution　of　the　bound　and　trapped　excitons　is　strongly　influenced　by　the　morphology　of　the　MAPbBr(3)　films.　These　results　provide　deep　insights　into　the　exciton　dynamics　in　MAPbBr(3),　facilitating　new　physics　for　the　design　of　related　optoelectronic　materials　and　devices.