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Author:

Zhang, Xiaobo (Zhang, Xiaobo.) | Zhou, Wencai (Zhou, Wencai.) | Chen, Xiaoqing (Chen, Xiaoqing.) | Chen, Yichuan (Chen, Yichuan.) | Li, Xuhong (Li, Xuhong.) | Wang, Manqi (Wang, Manqi.) | Zhou, Ying (Zhou, Ying.) | Yan, Hui (Yan, Hui.) | Zheng, Zilong (Zheng, Zilong.) | Zhang, Yongzhe (Zhang, Yongzhe.) (Scholars:张永哲)

Indexed by:

EI Scopus SCIE

Abstract:

In order to improve both performance and stability of perovskite solar cells, a design is provided by combining the advantages of high-efficiency 3D perovskite solar cells (PSCs) and long-term stability 2D PSCs. A 2D/3D hybrid perovskite film with a dual (bulk- and surface-) passivation approach is realized, based on in-depth discussion of the guanidine halide (GuX) passivation mechanisms. The approach can reduce the charge carrier losses in the bulk and prevent decomposition at the surface. Based on a combination of ab initio molecular dynamics simulations, Urbach energy, and photovoltage measurements, it is indicated that the engineered components of GuX salts are GuCl for bulk treatment and GuI surface treatment, respectively. The former can lower the nonradiative recombination, and the latter can prevent the halogen-out. Moreover, drive-level capacitance profiling is employed in the context of the 2D/3D perovskite structure for revealing and proving the passivation mechanism. The 2D/3D hybrid perovskites achieve long-term stability (efficiency degradation <10% after 30 days without encapsulation) and significant enhanced efficiency (22.53%) compared with the efficiency (20.31%) of the control device. This work represents a rational design strategy for bulk and surface passivation treatment in 2D/3D hybrid perovskites.

Keyword:

perovskite solar cells defect passivation stability

Author Community:

  • [ 1 ] [Zhang, Xiaobo]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Zhou, Wencai]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Chen, Xiaoqing]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Chen, Yichuan]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Wang, Manqi]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Yan, Hui]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 7 ] [Zheng, Zilong]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 8 ] [Zhang, Yongzhe]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 9 ] [Chen, Xiaoqing]Beijing Univ Technol, Fac Informat Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 10 ] [Zhang, Yongzhe]Beijing Univ Technol, Fac Informat Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 11 ] [Chen, Yichuan]Jingdezhen Ceram Univ, Sch Mech & Elect Engn, Jingdezhen 333403, Jiangxi, Peoples R China
  • [ 12 ] [Li, Xuhong]Beihang Univ, Sch Phys, Beijing 100191, Peoples R China
  • [ 13 ] [Zhou, Ying]Natl Inst Adv Ind Sci & Technol, Elect & Photon Res Inst, Tsukuba, Ibaraki 3058565, Japan

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Source :

ADVANCED ENERGY MATERIALS

ISSN: 1614-6832

Year: 2022

Issue: 26

Volume: 12

2 7 . 8

JCR@2022

2 7 . 8 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:66

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 57

SCOPUS Cited Count: 59

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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