As　a　new　type　of　photonic-chip　light　source,　quantum　dot　(QD)　lasers　have　recently　received　remarkable　attention.　However,　two　significant　problems　remain　to　be　solved:　the　high　lasing　threshold　characteristics　and　the　single　wavelength　application　in　a　photonic　chip.　To　achieve　this,　a　multi-wavelength　quantum　dot　laser　is　proposed.　An　ultrathin　QDs-film　laser　with　a　thickness　of　78　nm　is　developed.　The　microstructure　of　MAPbBr(3)　+　graphene　+　CoGaZnS　is　studied　using　Raman　spectroscopy　and　simulation,　illustrating　the　different　optical　bandgap　structures　in　different　combinations.　Four-wavelength　lasing　at　540,　628,　769,　and　824　nm　with　thresholds　of　25　kW　cm(-2)　and　50　kW　cm(-2)　are　achieved　at　room　temperature.　The　finite-difference　time-domain　(FDTD)　simulation　results　suggest　a　photon-jumping　phenomenon　in　a　fixed　period.　Subsequently,　the　transient　absorption　(TA)　spectrum　of　the　QDs-film　is　measured　to　reveal　the　ultrafast　photonics　process,　which　proves　the　two　hot-carrier　transfer　processes　and　the　zitterbewegung　(ZB)　phenomenon　in　graphene　at　416　nm.　The　ZB-dominated　hot-carrier　transfer　from　perovskite　MAPbBr(3)　to　CoGaZnS　is　confirmed.　This　study　can　contribute　to　hot-carrier　lasing　and　light-source　research　in　photonic　chips.