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Author:

Cui, Boyao (Cui, Boyao.) | Xing, Yanhui (Xing, Yanhui.) | Niu, Keyan (Niu, Keyan.) | Han, Jun (Han, Jun.) | Ma, Haixin (Ma, Haixin.) | Lv, Weiming (Lv, Weiming.) | Lei, Ting (Lei, Ting.) | Wang, Binghui (Wang, Binghui.) | Zeng, Zhongming (Zeng, Zhongming.)

Indexed by:

Scopus SCIE

Abstract:

Negative photoconductivity (NPC) exhibits great potential in the field of photodetection due to low power consumption and high response. Herein, the photodetectors based on InSe and multilayer graphene (MLG)/InSe van der Waals heterostructure are fabricated. The InSe photodetector shows positive photoconductivity (PPC) behavior, while the MLG/InSe photodetector exhibits NPC behavior. The ultra-high responsivity (1.88 x 10(5) A/W) is achieved for the NPC MLG/InSe photodetector, which is five orders of magnitude higher than that of the sole InSe photodetector based on PPC (6.97 A/W). The MLG/InSe photodetector also shows a high external quantum efficiency (6.41 x 10(7)%) and a fast response time (22 ms). The proposed high-performance MLG/InSe heterostructure photodetector based on NPC for low -dimensional materials may extend applications in future optoelectronic devices.(c) 2022 Vietnam National University, Hanoi. Published by Elsevier B.V.

Keyword:

Two-dimensional materials Negative photoconductivity InSe nanosheets van der Waals heterostructures Graphene photodetectors

Author Community:

  • [ 1 ] [Cui, Boyao]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 2 ] [Xing, Yanhui]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 3 ] [Han, Jun]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Ma, Haixin]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 5 ] [Wang, Binghui]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 6 ] [Niu, Keyan]Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Nanofabricat Facil, Suzhou 215123, Jiangsu, Peoples R China
  • [ 7 ] [Lv, Weiming]Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Nanofabricat Facil, Suzhou 215123, Jiangsu, Peoples R China
  • [ 8 ] [Lei, Ting]Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Nanofabricat Facil, Suzhou 215123, Jiangsu, Peoples R China
  • [ 9 ] [Zeng, Zhongming]Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Nanofabricat Facil, Suzhou 215123, Jiangsu, Peoples R China

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Source :

JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES

ISSN: 2468-2284

Year: 2022

Issue: 4

Volume: 7

8 . 0

JCR@2022

8 . 0 0 0

JCR@2022

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 15

SCOPUS Cited Count: 15

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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