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Author:

Moro, Fabrizio (Moro, Fabrizio.) | Ke, Shenggang (Ke, Shenggang.) | del Aguila, Andres Granados (del Aguila, Andres Granados.) | Soll, Aljoscha (Soll, Aljoscha.) | Sofer, Zdenek (Sofer, Zdenek.) | Wu, Qiong (Wu, Qiong.) | Yue, Ming (Yue, Ming.) | Li, Liang (Li, Liang.) | Liu, Xue (Liu, Xue.) | Fanciulli, Marco (Fanciulli, Marco.)

Indexed by:

EI Scopus SCIE

Abstract:

2D magnets represent material systems in which magnetic order and topological phase transitions can be observed. Based on these phenomena, novel types of computing architectures and magnetoelectronic devices can be envisaged. Unlike conventional magnetic films, their magnetism is independent of the substrate and interface qualities, and 2D magnetic properties manifest even in formally bulk single crystals. However, 2D magnetism in layered materials is rarely reported often due to weak exchange interactions and magnetic anisotropy, and low magnetic transition temperatures. Here, the electron spin resonance (ESR) properties of a layered antiferromagnetic CrSBr single crystal are reported. The W-like shape angular dependence of the ESR linewidth provides a signature for room temperature spin-spin correlations and for the XY spin model. By approaching the Neel temperature the arising of competing intralayer ferromagnetic and interlayer antiferromagnetic interactions might lead to the formation of vortex and antivortex pairs. This argument is inferred by modeling the temperature dependence of the ESR linewidth with the topological Berezinskii-Kosterlitz-Thouless phase transition. These findings together with the chemical stability and semiconducting properties, make CrSBr a promising layered magnet for future magneto- and topological-electronics.

Keyword:

magnetic anisotropy BKT transition electron spin resonance 2D magnets CrSBr

Author Community:

  • [ 1 ] [Moro, Fabrizio]Univ Milano Bicocca, Dept Mat Sci, Via R Cozzi 55, I-20125 Milan, Italy
  • [ 2 ] [Fanciulli, Marco]Univ Milano Bicocca, Dept Mat Sci, Via R Cozzi 55, I-20125 Milan, Italy
  • [ 3 ] [Ke, Shenggang]Anhui Univ, Inst Phys Sci & Informat Technol, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Peoples R China
  • [ 4 ] [Li, Liang]Anhui Univ, Inst Phys Sci & Informat Technol, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Peoples R China
  • [ 5 ] [Liu, Xue]Anhui Univ, Inst Phys Sci & Informat Technol, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Peoples R China
  • [ 6 ] [del Aguila, Andres Granados]Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore
  • [ 7 ] [Soll, Aljoscha]Univ Chem & Technol Prague, Fac Chem Technol, Dept Inorgan Chem, Tech 5, Prague 616628, Czech Republic
  • [ 8 ] [Sofer, Zdenek]Univ Chem & Technol Prague, Fac Chem Technol, Dept Inorgan Chem, Tech 5, Prague 616628, Czech Republic
  • [ 9 ] [Wu, Qiong]Beijing Univ Technol, Fac Mat & Mfg, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 10 ] [Yue, Ming]Beijing Univ Technol, Fac Mat & Mfg, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 11 ] [Li, Liang]Chinese Acad Sci, Inst Solid State Phys, Hefei Inst Phys Sci, Key Lab Mat Phys,Anhui Key Lab Nanomat & Nanotech, Hefei 230031, Peoples R China

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Source :

ADVANCED FUNCTIONAL MATERIALS

ISSN: 1616-301X

Year: 2022

Issue: 45

Volume: 32

1 9 . 0

JCR@2022

1 9 . 0 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:66

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 20

SCOPUS Cited Count: 18

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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