Halide　perovskite　materials　have　been　one　of　the　hottest　topics　in　recent　years　due　to　their　excellent　optoelectronic　properties.　This　upsurge　was　initially　caused　by　perovskite　solar　cells,　whose　power　conversion　efficiency　has　exceeded　25%　in　just　a　few　years.　The　halide　perovskite　materials　also　show　huge　potential　in　light-emitting　devices,　photodetectors,　lasers　and　other　optoelectronic　devices.　The　further　improvement　of　perovskite　materials　and　device　performance　and　stability　is　the　key　issue　of　researchers.　Various　strategies　to　improve　the　optoelectronic　properties　and　stability　of　perovskite　materials　have　also　been　proposed,　such　as　film　crystallization　control,　interface　modification/　defect　passivation,　component　engineering,　additive　engineering,　etc.　In　recent　years,　strain　engineering　has　been　found　to　be　able　to　effectively　improve　the　optoelectronic　properties　and　device　performance　of　halide　perovskites,　which　provides　a　novel　avenue　for　the　optimization　of　device　performance　of　perovskite　materials.　In　this　review,　we　start　with　the　basic　concept　of　stress　and　strain,　then　describe　how　to　measure　and　evaluate　the　residual　stress　and　strain　of　perovskite　materials,　as　well　as　how　residual　stress　and　strain　affect　the　device　performance　and　the　underlying　mechanism,　and　summarize　the　strategy　of　applying　stress　and　strain　to　perovskite　material.　Finally,　the　new　research　perspective　of　strain　engineering　to　improve　the　device　performance　of　perovskite　materials　is　prospected.　©　2022　Cailiao　Daobaoshe/　Materials　Review.　All　rights　reserved.