In　this　paper,　the　residual　stresses　with　a　nanoscale　depth　resolution　at　TSV-Cu/TiW/SiO2/Si　interfaces　under　different　thermal　loadings　are　characterized　using　the　ion-beam　layer　removal　(ILR)　method.　Moreover,　the　correlations　of　residual　stress,　microstructure,　and　the　failure　modes　of　the　interfaces　are　discussed.　The　residual　stresses　at　the　interfaces　of　TSV-Cu/TiW,　TiW/SiO2,　and　SiO2/Si　are　in　the　form　of　small　compressive　stress　at　room　temperature,　then　turn　into　high-tensile　stress　after　thermal　cycling　or　annealing.　In　addition,　the　maximum　residual　stress　inside　the　TSV-Cu　is　478.54　MPa　at　room　temperature,　then　decreases　to　216.75　MPa　and　90.45　MPa,　respectively,　after　thermal　cycling　and　annealing.　The　microstructural　analysis　indicates　that　thermal　cycling　causes　an　increase　in　the　dislocation　density　and　a　decrease　in　the　grain　diameter　of　TSV-Cu.　Thus,　residual　stress　accumulates　constantly　in　the　TSV-Cu/TiW　interface,　resulting　in　the　cracking　of　the　interface.　Furthermore,　annealing　leads　to　the　cracking　of　more　interfaces,　relieving　the　residual　stress　as　well　as　increasing　the　grain　diameter　of　TSV-Cu.　Besides　this,　the　applicability　of　the　ILR　method　is　verified　by　finite　element　modeling　(FEM).　The　influence　of　the　geometric　errors　of　the　micro-cantilever　beam　and　the　damage　to　the　materials　introduced　by　the　focused　ion　beam　(FIB)　in　the　experimental　results　are　discussed.