To　reduce　the　difficulty　of　the　epitaxy　caused　by　multiple　quantum　well　infrared　photodetector　(QWIP)　with　tunnel　compensation　structure,　an　improved　structure　is　proposed.　In　the　new　structure,　the　superlattices　are　located　between　the　tunnel　junction　and　the　barrier　as　the　infrared　absorption　region,　eliminating　the　effect　of　doping　concentration　on　the　well　width　in　the　original　structure.　Theoretical　analysis　and　experimental　verification　of　the　new　structure　are　carried　out.　The　experimental　sample　is　a　two-cycle　device,　each　cycle　contains　a　tunnel　junction,　a　superlattice　infrared　absorption　region　and　a　thick　barrier.　The　photosurface　of　the　detector　is　200　x　200　mu　m(2)　and　the　light　is　optically　coupled　by　45　degrees　oblique　incidence.　The　results　show　that　the　optimal　operating　voltage　of　the　sample　is　-1.1　V,　the　dark　current　is　2.99　x　10(-8)　A,　and　the　blackbody　detectivity　is　1.352　x　10(8)　cm　center　dot　Hz(1/2)center　dot　W-1　at　77　K.　Our　experiments　show　that　the　new　structure　can　work　normally.