Three-dimensional　(3D)　interconnection　technology　based　on　glass　through　vias　(TGVs)　has　been　used　to　integrate　passive　devices,　and　optoelectronic　devices　due　to　its　superior　electrical　qualities,　outstanding　mechanical　stability,　and　lower　cost.　Nevertheless,　the　performance　and　reliability　of　the　device　will　be　impacted　by　the　thermal　stress　brought　on　by　the　mismatch　of　the　coefficient　of　thermal　expansion　among　multi-material　structures　and　the　complicated　structure　of　TGV.　This　paper　focuses　on　thermal　stress　evolution　in　different　geometric　and　material　parameters　and　the　development　of　a　controlled　method　for　filling　polymers　in　TGV　interconnected　structures.　In　addition,　a　numerical　study　based　on　the　finite　element　(FE)　model　has　been　conducted　to　analyze　the　stress　distribution　of　the　different　thicknesses　of　TGV-Cu.　Additionally,　a　TGV　interconnected　structure　model　with　a　polymer　buffer　layer　is　given　to　solve　the　crack　problem　appearing　at　the　edge　of　RDL.　Meanwhile,　after　practical　verification,　in　comparison　to　the　experimental　results,　the　FE　model　was　shown　to　be　highly　effective　and　accurate　for　predicting　the　evolution　of　stress,　and　several　recommendations　were　made　to　alleviate　stress-related　reliability　concerns.　An　improved　manufacturing　process　flow　for　the　TGV　interconnected　structure　was　proposed　and　verified　as　feasible　to　address　the　RDL　crack　issue　based　on　the　aforementioned　research.　It　provides　helpful　information　for　the　creation　of　highly　reliable　TGV　connection　structures.