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Author:

Song, Jingsi (Song, Jingsi.) | Liu, Hongpeng (Liu, Hongpeng.) | Pu, Wenhua (Pu, Wenhua.) | Lu, Yue (Lu, Yue.) | Si, Zhixiang (Si, Zhixiang.) | Zhang, Zeyu (Zhang, Zeyu.) | Ge, Yang (Ge, Yang.) | Li, Nengxu (Li, Nengxu.) | Zhou, Huanping (Zhou, Huanping.) | Xiao, Wei (Xiao, Wei.) | Wang, Ligen (Wang, Ligen.) | Sui, Manling (Sui, Manling.) (Scholars:隋曼龄)

Indexed by:

EI Scopus SCIE

Abstract:

The thermal instability of organic-inorganic halide perovskite solar cells (PSCs) is one of the most important factors restraining their commercialization. It has recently been reported that modifications at the interface between the electron transport layer (ETL) and the perovskite layer could effectively promote the long-term thermal stability of high-efficiency PSCs. However, few studies have disclosed the effect of the microstructure of ETLs, such as SnO2 or TiO2, on the thermal degradation pathway of the perovskite layer at nano-, or even atomic-scale, resolution. In this work, a variety of characterization techniques were used to detect the diffusion of the oxygen element from SnO2/TiO2 layers into organic-inorganic hybrid perovskite (OIHP) layers, which was accompanied by the thermal decomposition of MAPbI(3) and FA(0.9)Cs(0.1)PbI(3) films. Moreover, a preferential thermal decomposition of the perovskite layer at the SnO2-perovskite interface was confirmed to be an adverse factor inducing the performance degradation of PSCs. First-principles calculations further elucidate that dangling bonds at the SnO2 or TiO2 ETL-perovskite interface down-regulate the oxygen vacancy formation energy. Furthermore, a low segregation energy for oxygen diffusion (0.19-0.55 eV and 0.26 eV at SnO2 and TiO2-perovskite interfaces, respectively) accelerates the transfer of the oxygen element from SnO2 or TiO2 into OIHP layers and promotes the transfer of protons in the perovskite layer. Furthermore, the fabrication of planar OIHP solar cells based on an O-2-plasma treated ETL SnO2 layer effectively improved their photoelectric performance and thermal stability, further confirming the important role of interfacial oxygen in modulating the stability of PSC devices.

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Author Community:

  • [ 1 ] [Song, Jingsi]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 2 ] [Liu, Hongpeng]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 3 ] [Lu, Yue]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 4 ] [Si, Zhixiang]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 5 ] [Zhang, Zeyu]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 6 ] [Ge, Yang]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 7 ] [Sui, Manling]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 8 ] [Pu, Wenhua]GRIMAT Engn Inst Co Ltd, GRIMAT Grp Co Ltd, State Key Lab Nonferrous Met & Proc, Beijing 100088, Peoples R China
  • [ 9 ] [Xiao, Wei]GRIMAT Engn Inst Co Ltd, GRIMAT Grp Co Ltd, State Key Lab Nonferrous Met & Proc, Beijing 100088, Peoples R China
  • [ 10 ] [Wang, Ligen]GRIMAT Engn Inst Co Ltd, GRIMAT Grp Co Ltd, State Key Lab Nonferrous Met & Proc, Beijing 100088, Peoples R China
  • [ 11 ] [Li, Nengxu]Peking Univ, Coll Engn,Minist Educ,BIC ESAT, Dept Mat Sci & Engn,Key Lab Polymer Chem & Phys, Beijing Key Lab Theory & Technol Adv Battery Mat, Beijing 100871, Peoples R China
  • [ 12 ] [Zhou, Huanping]Peking Univ, Coll Engn,Minist Educ,BIC ESAT, Dept Mat Sci & Engn,Key Lab Polymer Chem & Phys, Beijing Key Lab Theory & Technol Adv Battery Mat, Beijing 100871, Peoples R China

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Source :

ENERGY & ENVIRONMENTAL SCIENCE

ISSN: 1754-5692

Year: 2022

Issue: 11

Volume: 15

Page: 4836-4849

3 2 . 5

JCR@2022

3 2 . 5 0 0

JCR@2022

ESI Discipline: CHEMISTRY;

ESI HC Threshold:53

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 35

SCOPUS Cited Count: 41

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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