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Author:

Cui, Ning (Cui, Ning.) | Xu, Mengke (Xu, Mengke.) | Guan, Min (Guan, Min.) | Liu, Xingfang (Liu, Xingfang.) | Zeng, Yiping (Zeng, Yiping.) | Zhang, Yang (Zhang, Yang.)

Indexed by:

EI Scopus SCIE

Abstract:

In this letter, we focus on the relationship between modification bioparticle density (N) and biological regulation ability in extended gate HEMT (EG-HEMT) biosensors. By analyzing, we demonstrate that under the same gate electrodes size (S (g)) and concentration, N is exponentially related to the area of sensing regions (y) and has fixed exponential magnification -0.65 +/- 0.05. This formula had been demonstrated to have perfect universality when testing protein and small molecules. Finally, we apply N to the structural design of EG-HEMT biosensors and projected that 10 y structure has both high biological regulation ability of biosensors and efficient utility of chips.

Keyword:

biological detection extended gate HEMT biosensor bioparticle density

Author Community:

  • [ 1 ] [Cui, Ning]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
  • [ 2 ] [Xu, Mengke]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
  • [ 3 ] [Guan, Min]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
  • [ 4 ] [Liu, Xingfang]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
  • [ 5 ] [Zeng, Yiping]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
  • [ 6 ] [Zhang, Yang]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
  • [ 7 ] [Cui, Ning]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 8 ] [Xu, Mengke]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 9 ] [Guan, Min]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 10 ] [Liu, Xingfang]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 11 ] [Zeng, Yiping]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 12 ] [Zhang, Yang]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 13 ] [Cui, Ning]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Cui, Ning]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China;;[Guan, Min]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China;;[Zeng, Yiping]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China;;[Cui, Ning]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China;;[Guan, Min]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China;;[Zeng, Yiping]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China;;[Cui, Ning]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China;;

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Source :

APPLIED PHYSICS EXPRESS

ISSN: 1882-0778

Year: 2023

Issue: 1

Volume: 16

2 . 3 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:17

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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