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Author:

Wan, Zhengfen (Wan, Zhengfen.) | Zhang, Qiwen (Zhang, Qiwen.) | Hu, Fangzhen (Hu, Fangzhen.) | Dong, Yibo (Dong, Yibo.) | Li, Runze (Li, Runze.) | Hu, Liangchen (Hu, Liangchen.) | Xie, Yiyang (Xie, Yiyang.) | Yue, Zengji (Yue, Zengji.) | Chen, Xi (Chen, Xi.) | Gu, Min (Gu, Min.)

Indexed by:

EI Scopus SCIE

Abstract:

Artificial optoelectronic synapses have drawn tremendous attention in neuromorphic computing due to their exceptional properties of incorporating optical-sensing and synaptic functions. However, the complex fabrication processes and device architectures greatly limit their applications. More importantly, artificial neural networks (ANNs) commonly implemented with optoelectronic synapses cannot take full advantage of the time-dependent data of synaptic devices, resulting in defective accuracies. Here, facile two-terminal optoelectronic synapses based on topological insulator Sb2Te3 films are fabricated, which exhibit significant photocurrent responses, owing to the efficient light-matter interaction in bulk and the topological surface state of Sb2Te3. The performance of Sb2Te3 devices can be tuned both optically and electrically. Typical characteristics of synapses, such as paired-pulse facilitation, short-term memory, long-term memory, and learning behavior, have been demonstrated. With the establishment of recurrent neural networks (RNNs) that are committed to processing temporal data, the as-fabricated synapse devices are employed for binary image recognition of handwritten numbers "0" and "1". The recognition accuracy of RNNs can reach as high as 100%, which is dramatically higher than those of ANNs. The effective employment of temporal data with RNNs ensured high recognition accuracy. These Sb2Te3 optoelectronic synapses with RNNs indicate the great potential for developing high-performance brain-inspired neuromorphic computing.

Keyword:

topological insulators (3) films optoelectronic synapses recurrent neural networks neuromorphic computing Sb Te-2 image recognition

Author Community:

  • [ 1 ] [Wan, Zhengfen]Univ Shanghai Sci & Technol, Inst Photon Chips, Shanghai 200093, Peoples R China
  • [ 2 ] [Zhang, Qiwen]Univ Shanghai Sci & Technol, Inst Photon Chips, Shanghai 200093, Peoples R China
  • [ 3 ] [Hu, Fangzhen]Univ Shanghai Sci & Technol, Inst Photon Chips, Shanghai 200093, Peoples R China
  • [ 4 ] [Dong, Yibo]Univ Shanghai Sci & Technol, Inst Photon Chips, Shanghai 200093, Peoples R China
  • [ 5 ] [Li, Runze]Univ Shanghai Sci & Technol, Inst Photon Chips, Shanghai 200093, Peoples R China
  • [ 6 ] [Yue, Zengji]Univ Shanghai Sci & Technol, Inst Photon Chips, Shanghai 200093, Peoples R China
  • [ 7 ] [Chen, Xi]Univ Shanghai Sci & Technol, Inst Photon Chips, Shanghai 200093, Peoples R China
  • [ 8 ] [Gu, Min]Univ Shanghai Sci & Technol, Inst Photon Chips, Shanghai 200093, Peoples R China
  • [ 9 ] [Wan, Zhengfen]Univ Shanghai Sci & Technol, Ctr Artificial Intelligence Nanophoton, Sch Opt Elect & Comp Engn, Shanghai 200093, Peoples R China
  • [ 10 ] [Zhang, Qiwen]Univ Shanghai Sci & Technol, Ctr Artificial Intelligence Nanophoton, Sch Opt Elect & Comp Engn, Shanghai 200093, Peoples R China
  • [ 11 ] [Hu, Fangzhen]Univ Shanghai Sci & Technol, Ctr Artificial Intelligence Nanophoton, Sch Opt Elect & Comp Engn, Shanghai 200093, Peoples R China
  • [ 12 ] [Dong, Yibo]Univ Shanghai Sci & Technol, Ctr Artificial Intelligence Nanophoton, Sch Opt Elect & Comp Engn, Shanghai 200093, Peoples R China
  • [ 13 ] [Li, Runze]Univ Shanghai Sci & Technol, Ctr Artificial Intelligence Nanophoton, Sch Opt Elect & Comp Engn, Shanghai 200093, Peoples R China
  • [ 14 ] [Yue, Zengji]Univ Shanghai Sci & Technol, Ctr Artificial Intelligence Nanophoton, Sch Opt Elect & Comp Engn, Shanghai 200093, Peoples R China
  • [ 15 ] [Chen, Xi]Univ Shanghai Sci & Technol, Ctr Artificial Intelligence Nanophoton, Sch Opt Elect & Comp Engn, Shanghai 200093, Peoples R China
  • [ 16 ] [Gu, Min]Univ Shanghai Sci & Technol, Ctr Artificial Intelligence Nanophoton, Sch Opt Elect & Comp Engn, Shanghai 200093, Peoples R China
  • [ 17 ] [Hu, Liangchen]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 18 ] [Xie, Yiyang]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China

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Source :

ADVANCED OPTICAL MATERIALS

ISSN: 2195-1071

Year: 2022

Issue: 2

Volume: 11

9 . 0

JCR@2022

9 . 0 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:66

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 8

SCOPUS Cited Count: 15

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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