In　this　study　Zn　doping　was　applied　to　MgO　thin　films　in　order　to　improve　the　secondary　electron　emission　(SEE)　property　via　relieving　the　surface　charging　and　modifying　the　electron　structure　of　MgO.　MgO　and　Mg1-xZnxO　thin　films　(the　Zn　doping　proportion　x　is　within　11　at.%)　were　prepared　on　Si　substrates　by　a　simple,　cost　effective　aerosol　assisted　chemical　vapor　deposition　method　followed　by　annealing　at　elevated　temperature.　The　surface　morphology　and　microstructure　of　the　Mg1-xZnxO　films　were　characterized.　Secondary　electron　yield　(o)　as　a　function　of　primary　electron　energy　the　films　was　examined.　First　principles　calculation　based　on　the　density　functional　theory　was　introduced　to　evaluate　the　electronic　structure　and　work　function　of　Mg1-xZnxO　crystals.　SEE　testing　results　revealed　that　o　of　the　MgO　film　is　effectively　improved　by　Zn　doping　of　proper　concentration.　The　undoped　MgO　film　with　relatively　smooth　surface　exhibits　a　maximum　secondary　electron　yield　(om)　of　5.1　at　Ep　of　750　eV.　The　om　of　the　Mg1-xZnxO　film　(x　=　0.09)　is　7.0　at　Ep　=　1500　eV,　which　is　34.6%　higher　than　that　of　the　MgO　film　prepared　under　identical　method.　Improvement　of　o　of　the　Mg1-xZnxO　films　with　x　＜　0.1　is　probably　due　to　the　unique　surface　morphology　with　protrusions　and　sharp　edges　and　the　increase　of　electrical　conductivities　of　the　films.　Another　factor　contributing　to　the　o　increase　is　the　decrease　of　work　function　due　to　Zn　doping,　which　is　confirmed　by　first-principles　calculation　of　Mg1-xZnxO　crystals.