Holding time effect on mechanical properties and protrusion behaviors of through silicon via copper under various annealing processes - Details

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Abstract：

The　thermomechanical　reliabilities　of　TSV　based　structures　are　closely　affected　by　the　protrusion　deformation,　stress-strain　constitutive　behavior　and　microstructure　evolution　of　TSV-Cu　under　various　thermal　loadings.　In　this　study,　the　stress-strain　constitutive　curves　of　TSV-Cu　under　various　annealing　conditions　considering　holding　time　effect　are　acquired　by　the　nanoindentation　test　and　finite　element　(FE)　reverse　analysis.　The　yielding　softening　in　stress-strain　curves　is　found　if　the　holding　time　is　less　than　90　min.　However,　the　stable　stress-strain　curves　are　obtained　as　holding　time　exceeds　90　min.　Furthermore,　the　mechanisms　of　softening　and　stability　in　stress-strain　curves　are　revealed　by　observing　the　microstructure　evolution　of　TSV-Cu　with　a　wide　range　of　holding　time.　In　addition,　the　relationships　among　protrusion　height,　constitutive　curves　as　well　as　microstructure　parameter　of　TSV-Cu　with　different　annealing　holding　time　are　built.　This　study　provides　an　intrinsic　insight　on　the　correlations　of　deformation,　constitutive　curves,　and　microstructure　for　TSV-Cu　annealing　processes　considering　holding　time　effect.　©　2023　Elsevier　Ltd

Keyword：

Protrusion Microstructure Stress-strain constitutive curve Annealing Through Silicon Via copper (TSV-Cu)

Author Community：

[ 1 ] [Zhang M.]Institute of Electronics Packaging Technology and Reliability, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Qin F.]Institute of Electronics Packaging Technology and Reliability, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Qin F.]Beijing Key Laboratory of Advanced Manufacturing Technology, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Chen S.]Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, 510610, China
[ 5 ] [Dai Y.]Institute of Electronics Packaging Technology and Reliability, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
[ 6 ] [Dai Y.]Beijing Key Laboratory of Advanced Manufacturing Technology, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
[ 7 ] [Jin Y.]Institute of Electronics Packaging Technology and Reliability, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
[ 8 ] [Chen P.]Institute of Electronics Packaging Technology and Reliability, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
[ 9 ] [Chen P.]Beijing Key Laboratory of Advanced Manufacturing Technology, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
[ 10 ] [An T.]Institute of Electronics Packaging Technology and Reliability, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
[ 11 ] [An T.]Beijing Key Laboratory of Advanced Manufacturing Technology, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
[ 12 ] [Gong Y.]Institute of Electronics Packaging Technology and Reliability, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
[ 13 ] [Gong Y.]Beijing Key Laboratory of Advanced Manufacturing Technology, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China

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Related Keywords：

Effect of Capped Cu Layer on Protrusion Behaviors of Through Silicon Via Copper (TSV Cu) under Double Annealing Conditions: Comparative Study
2022，IEEE Transactions on Device and Materials Reliability
Microstructure evolution and protrusion of through silicon via copper (TSV-Cu) considering different annealing heating rates
2022，
Protrusion of electroplated copper filled in through silicon vias during annealing process
2016，MICROELECTRONICS RELIABILITY
Protrusion of Through-Silicon-Via (TSV) Copper with Double Annealing Processes
2022，JOURNAL OF ELECTRONIC MATERIALS

Source ：

Materials Science in Semiconductor Processing

ISSN： 1369-8001

Year： 2023

Volume： 158

4 . 1 0 0

JCR@2022

ESI Discipline： MATERIALS SCIENCE;

ESI HC Threshold：26

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 3

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 13

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