Study on electronic blocking layer of 403 nm GaN-based vertical cavity surface emitting lasers - Details

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[ 1 ] [Cui, Bi-feng]Key Laboratory of Opto-Electronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Wang, Yang]Key Laboratory of Opto-Electronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Fang, Tian-xiao]Key Laboratory of Opto-Electronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Hao, Shuai]Key Laboratory of Opto-Electronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Cheng, Jin]Key Laboratory of Opto-Electronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Li, Cai-fang]Key Laboratory of Opto-Electronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing; 100124, China

Reprint Author's Address：

[cui, bi-feng]key laboratory of opto-electronics technology, ministry of education, faculty of information technology, beijing university of technology, beijing; 100124, china

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cbf@bjut.edu.cn

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Optoelectronics Letters

ISSN： 1673-1905

Year： 2019

Issue： 6

Volume： 15

Page： 411-414

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WoS CC Cited Count： 0

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 6

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