Based　on　a　actual　IGBT　module　test　chip,　a　two-dimensional　model　of　Al　bonding　wire　between　IGBT　chip　and　Direct　Copper　Bonded　(DCB)　is　established.　The　finite　element　analysis　of　thermal-stress　coupling　is　carried　out　using　commercial　software　ABAQUS,　by　changing　the　height　of　the　bonding　wire　peak　point,　the　transverse　position　of　the　bonding　wire　peak　point　and　the　second　welding　point.　The　thermal　stress　of　Al　bonding　wires　with　different　shape　parameters　at　the　same　temperature　is　simulated,　and　the　maximum　thermal　stress　and　its　position　is　determined.　The　results　show　that　the　maximum　thermal　stress　always　exists　at　the　junction　between　the　first　bonding　point　and　the　metallized　layer,　and　increasing　the　height　of　the　peak　point　can　reduce　the　thermal　stress.　The　minimum　thermal　stress　on　the　bonding　wire　is　91.93　MPa.　　©　2022　IEEE.