Vertical　graphene　(VG)　combines　the　excellent　properties　of　conventional　graphene　with　a　unique　vertical　nanosheet　structure,　and　has　shown　tremendous　promise　in　the　field　of　electronics　and　composites.　However,　its　complex　surface　morphology　brings　great　difficulties　to　micro-nano　fabrication,　especially　regarding　photolithography　induced　nanosheet　collapse　and　remaining　chemical　residues.　Here,　we　demonstrate　an　innovative　method　for　directly　growing　patterned　VG　on　a　SiO2/Si　substrate.　A　patterned　Cr　film　was　deposited　on　the　substrate　as　a　barrier　layer.　The　VG　was　synthesized　by　PECVD　on　both　the　patterned　Cr　film　and　the　exposed　SiO2/Si　substrate.　During　the　cooling　process,　the　patterned　Cr　film　covered　by　VG　naturally　peeled　off　from　the　substrate　due　to　the　thermal　stress　mismatch,　while　the　VG　directly　grown　on　the　SiO2/Si　substrate　was　remained.　The　temperature-dependent　thermal　stress　distribution　in　each　layer　was　analyzed　using　finite　element　simulations,　and　the　separation　mechanism　of　the　Cr　film　from　the　substrate　was　explained.　This　method　avoids　the　contamination　and　damage　caused　by　the　VG　photolithography　process.　Our　work　is　expected　to　provide　a　convenient　and　reliable　solution　for　the　manufacture　of　VG-based　electronic　devices.