In　this　work,　the　surface　morphology　and　internal　defect　evolution　process　of　GaAs　substrates　implanted　with　light　ions　of　different　fluence　combinations　are　studied.　The　influence　of　H　and　He　ions　implantation　on　the　atomic　mechanism　of　the　blister　phenomenon　observed　after　annealing　is　investigated.　Raman　spectroscopy　is　used　to　measure　the　surface　stress　change　of　different　samples　before　and　after　implantation　and　annealing.　Optical　microscopy　and　atomic　force　microscopy　are　used　to　characterize　the　morphology　changes　of　the　GaAs　surface　under　different　annealing　conditions.　The　evolution　of　bubbles　and　defects　in　GaAs　crystals　is　revealed　by　transmission　electron　microscopy.　Through　this　study,　it　is　hoped　that　ion　implantation　fluence,　surface　exfoliation　efficiency　and　exfoliation　cost　can　be　optimized.　At　the　same　time,　it　also　lays　a　foundation　for　the　heterointegration　of　GaAs　film　on　Si.　©　2023　Chinese　Institute　of　Electronics.