Infrared　detectors　are　widely　used　in　night　vision　imaging,　security　inspection,　medical　testing,　environmental　monitoring　and　other　fields.　Infrared　detectors　based　on　two-dimensional　materials　have　become　a　research　hotspot.　A　photoconductive　graphene　infrared　detector　based　on　inverted　fluorination　is　introduced　in　this　paper.　An　inverted　fluorination　method　is　adopted　to　reduce　the　physical　bombardment　damage　to　graphene　and　reduce　the　difficulty　of　graphene　fluorination　regulation.　The　Raman　spectrum　mapping　of　fluorinated　graphene　is　analyzed.　The　variation　of　graphene　Raman　spectrum　and　infrared　response　against　fluorination　time　is　investigated,　clarifying　the　properties　of　fluorinated　graphene　suitable　for　infrared　sensing.　The　graphene　sensor　shows　the　highest　responsivity　when　the　value　of　ID/ID＇　peak　ratio　of　the　graphene　Raman　spectrum　is　the　lowest.　The　photoconductive　graphene　infrared　sensor　based　on　controllable　inverted　fluorination　process　has　the　advantages　of　simple　structure,　high　process　feasibility.　©　2023　SPIE.