Monolayer　group　Ⅵ　transition　metal　dichalcogenides　(TMDs)　have　recently　emerged　as　promising　candidates　for　photon-ic　and　opto-valleytronic　applications.　The　optoelectronic　properties　of　these　atomically-thin　semiconducting　crystals　are　strongly　governed　by　the　tightly　bound　electron-hole　pairs　such　as　excitons　and　trions　(charged　excitons).　The　anomal-ous　spin　and　valley　configurations　at　the　conduction　band　edges　in　monolayer　WS2　give　rise　to　even　more　fascinating　valley　many-body　complexes.　Here　we　find　that　the　indirect　Q　valley　in　the　first　Brillouin　zone　of　monolayer　WS2　plays　a　critical　role　in　the　formation　of　a　new　excitonic　state,　which　has　not　been　well　studied.　By　employing　a　high-quality　h-BN　encapsulated　WS2　field-effect　transistor,　we　are　able　to　switch　the　electron　concentration　within　K-Q　valleys　at　conduc-tion　band　edges.　Consequently,　a　distinct　emission　feature　could　be　excited　at　the　high　electron　doping　region.　Such　fea-ture　has　a　competing　population　with　the　K　valley　trion,　and　experiences　nonlinear　power-law　response　and　lifetime　dy-namics　under　doping.　Our　findings　open　up　a　new　avenue　for　the　study　of　valley　many-body　physics　and　quantum　optics　in　semiconducting　2D　materials,　as　well　as　provide　a　promising　way　of　valley　manipulation　for　next-generation　entangled　photonic　devices.