Chalcogenide　based　nano-films　have　attracted　considerable　attention　as　a　new　type　of　semiconductor　material　in　the　fields　of　optical　waveguides,　laser　devices,　and　solar　cells.　However,　it　remains　challenging　to　use　them　effectively　in　a　variety　of　fields,　mainly　due　to　their　intricate　fabrication　procedures　and　limited　electrical　characteristics.　In　this　study,　zinc　selenide　(ZnSe)　is　doped　with　molybdenum　(Mo)　and　gallium　(Ga).　The　heterodimensional　structured　chalcogenide　semiconductor　nano-film　is　obtained　by　pulsed　laser　deposition　(PLD).　The　results　of　scanning　electron　microscopy　(SEM)　and　energy　dispersive　spectroscopy　(EDS)　confirm　that　the　structure　of　the　nano-film　is　compact　and　the　composition　is　uniformly　distributed.　The　transmittance　of　all　samples　is　close　to　100%　in　the　400-2000　nm　range　shown.　The　P/N　type　of　the　film　can　be　controlled　by　changing　the　preparation　conditions.　All　the　results　indicate　that　the　novel　heterodimensional　structured　chalcogenide　semiconductor　nano-film　in　this　study　has　a　simple　and　efficient　preparation　method,　controllable　composition,　and　unique　optical/electrical　properties.　These　properties　can　be　used　in　integrated　circuits　and　photovoltaic　power　generation.