In　the　conventional　AlGaN/GaN　high　electron　mobility　transistor　(AlGaN/GaN　HEMT)　photodetector　with　ZnO　films,　there　are　many　limitations　such　as　low　light　absorption　efficiency,　low　photoelectric　conversion　efficiency　and　small　photocurrent.　To　improve　the　above　problems,　a　ZnO　nanowire　photosensitive　gate　photodetector　based　on　AlGaN/GaN　HEMT　structure　was　proposed　and　successfully　fabricated　in　this　experiment.　First,　ZnO　nanowires　were　successfully　prepared　on　Si　substrates　and　AlGaN/GaN　high　electron　mobility　transistor(HEMT)　substrate　materials　by　hydrothermal　method.　A　series　of　tests　were　carried　out　by　using　X-ray　diffractometer,　scanning　electron　microscope　(SEM),　photo　luminescence　(PL)　Spectrum　and　other　instruments.　It　is　found　that　the　ZnO　nanowires　grown　on　the　AlGaN/GaN　HEMT　substrate　material　has　lower　defect　density,　better　crystallinity　and　better　optoelectronic　properties.　Then,　the　ZnO　nanowires　were　successfully　integrated　into　the　gate　of　the　AlGaN/GaN　HEMT　device,　and　an　AlGaN/GaN　HEMT　ultraviolet　photodetector　with　a　ZnO　nanowire　photosensitive　gate　was　fabricated.　Comparing　the　AlGaN/GaN　HEMT　device　with　ZnO　nanowire　photosensitive　gate　prepared　in　the　experiment　with　the　conventional　AlGaN/GaN　HEMT　device,　it　is　found　that　the　device　with　ZnO　nanowire　can　reach　a　peak　value　of　1.15　×　104　A/W　in　the　ultraviolet　band.　The　responsivity　is　about　2.　85　times　higher　than　that　of　the　conventional　AlGaN/GaN　HEMT.　The　response　time　and　recovery　time　of　the　prepared　ZnO　nanowire　device　are　shortened　to　τr　=　10　ms　and　τf　=250　ms,　which　significantly　improves　the　performance　of　the　detector.　©　2023　Beijing　University　of　Technology.　All　rights　reserved.