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Author:

Liu, S. (Liu, S..) | Ma, L. (Ma, L..) | Zhen, C. (Zhen, C..) | Li, D. (Li, D..) | Wang, Y. (Wang, Y..) | Jia, Q. (Jia, Q..) | Guo, F. (Guo, F..)

Indexed by:

EI Scopus SCIE

Abstract:

Bismuth telluride-based thermoelectric devices have attracted much attention in the field of low-quality waste heat recovery below 200 °C. However, the rapid diffusion at the interface between solder and thermoelectric materials was serious after long-term service. The brittle Sn-Te was believed to cause the electrode failure. In this work, it suggested that the regional eutectic melting at the β-Sn/SbSn interface at hot-end electrode was a more important risk to cause the failure, requiring urgent attention. Co-diffusion of Bi and Sb led to partial melting of the Sn-based solder, which did not wet on the SbSn surface and formed solidification cracks. Besides, the distributions and migrations of Bi, Sb, Te, and Sn elements at the interface were investigated, the crystal growth direction of SnTe, SbSn, and nano-Bi phases were analyzed, and the phase composition and phase evolution in complex intermetallic compounds (IMCs) at the Bi-Sb-Te/Sn interface were clarified, combined with SEM, EPMA, and TEM characterization during the aging at 150 °C for 150 h. Based on this failure mechanism, it suggested that the service temperature should be lower than the Sn-Bi eutectic temperature and as low as possible, in the case of without any coating treatment for the consideration of cost. © 2023 Elsevier B.V.

Keyword:

Evolution Bismuth telluride Thermoelectric device Electrode Intermetallic compound Failure

Author Community:

  • [ 1 ] [Liu S.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 2 ] [Liu S.]Key Laboratory of Advanced Functional Materials, Education Ministry of China, Beijing University of Technology, Beijing, 100124, China
  • [ 3 ] [Ma L.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 4 ] [Ma L.]Key Laboratory of Advanced Functional Materials, Education Ministry of China, Beijing University of Technology, Beijing, 100124, China
  • [ 5 ] [Zhen C.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 6 ] [Zhen C.]Key Laboratory of Advanced Functional Materials, Education Ministry of China, Beijing University of Technology, Beijing, 100124, China
  • [ 7 ] [Li D.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 8 ] [Li D.]Key Laboratory of Advanced Functional Materials, Education Ministry of China, Beijing University of Technology, Beijing, 100124, China
  • [ 9 ] [Wang Y.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 10 ] [Wang Y.]Key Laboratory of Advanced Functional Materials, Education Ministry of China, Beijing University of Technology, Beijing, 100124, China
  • [ 11 ] [Jia Q.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 12 ] [Jia Q.]Key Laboratory of Advanced Functional Materials, Education Ministry of China, Beijing University of Technology, Beijing, 100124, China
  • [ 13 ] [Guo F.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 14 ] [Guo F.]Key Laboratory of Advanced Functional Materials, Education Ministry of China, Beijing University of Technology, Beijing, 100124, China

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Source :

Applied Surface Science

ISSN: 0169-4332

Year: 2023

Volume: 640

6 . 7 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:26

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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