The　preparation　of　p-type　heavily-doped　4H-SiC　is　conducted　by　using　the　laser　irradiation　of　solid　Al　film.　The　effects　of　the　Al　film　thickness　and　the　laser　pulse　number　on　the　doping　results　are　analyzed　and　the　control　of　different　process　parameters　to　the　electrical　properties　of　p-type　doped　layers　is　verified.　The　results　show　that　the　maximum　carrier　concentration　is　6.613×1017　cm-3,　the　minimum　volume　resistivity　is　17.36　Ω•cm,　and　the　doping　concentration　(particle　number　concentration)　is　6.6×1019　cm-3,　when　the　Al　film　thickness　is　120　nm　and　the　pulse　number　is　50.　The　Al　doping　modification　mechanism　of　4H-SiC　can　be　described　as　the　formation　of　p-type　doped　layer　as　a　result　of　the　Si-C　bond　breaking　and　the　replace　of　Si　by　Al　under　the　ultraviolet　laser　irradiation.　©　2018,　Chinese　Lasers　Press.　All　right　reserved.