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Author:

Jia, Wenxu (Jia, Wenxu.) | Hou, Yudong (Hou, Yudong.) (Scholars:侯育冬) | Zheng, Mupeng (Zheng, Mupeng.) | Xu, Yuru (Xu, Yuru.) | Zhu, Mankang (Zhu, Mankang.) | Yang, Kuiyong (Yang, Kuiyong.) | Cheng, Huarong (Cheng, Huarong.) | Sun, Shuying (Sun, Shuying.) | Xing, Jie (Xing, Jie.)

Indexed by:

EI

Abstract:

Ceramic capacitors with upper operating temperatures far beyond 200°C are essential for high-temperature electronics used in deep oil drilling, aviation, automotive industry and so on. Recent advances in existing lead-free dielectrics for potential high-temperature capacitor applications are reviewed and grouped into three categories according to the parent component of the solid solution. Their desirable temperature stabilities were summarised comprehensively. However, there are still some limitations in the current research, such as achieving low loss in a wide temperature range and maintaining stable dielectric properties with different frequencies or at different voltages. Furthermore, the successful implementation of multilayer ceramic capacitors is one of the biggest challenges, which will have far-reaching impacts on the realisation of high-temperature capacitor application in the future. © 2018 Institution of Engineering and Technology. All rights reserved.

Keyword:

Ceramics industry Dielectric materials Automotive industry Dielectric properties Capacitors Electronics industry Ceramic capacitors High temperature applications

Author Community:

  • [ 1 ] [Jia, Wenxu]College of Materials Science and Engineering, Beijing University of Technology, Beijing, China
  • [ 2 ] [Hou, Yudong]College of Materials Science and Engineering, Beijing University of Technology, Beijing, China
  • [ 3 ] [Zheng, Mupeng]College of Materials Science and Engineering, Beijing University of Technology, Beijing, China
  • [ 4 ] [Xu, Yuru]College of Materials Science and Engineering, Beijing University of Technology, Beijing, China
  • [ 5 ] [Zhu, Mankang]College of Materials Science and Engineering, Beijing University of Technology, Beijing, China
  • [ 6 ] [Yang, Kuiyong]Materials R and D Department, Beijing Yuanliu Hongyuan Electronic Technology Company, Ltd, Beijing, China
  • [ 7 ] [Cheng, Huarong]Materials R and D Department, Beijing Yuanliu Hongyuan Electronic Technology Company, Ltd, Beijing, China
  • [ 8 ] [Sun, Shuying]Materials R and D Department, Beijing Yuanliu Hongyuan Electronic Technology Company, Ltd, Beijing, China
  • [ 9 ] [Xing, Jie]Materials R and D Department, Beijing Yuanliu Hongyuan Electronic Technology Company, Ltd, Beijing, China

Reprint Author's Address:

  • 侯育冬

    [hou, yudong]college of materials science and engineering, beijing university of technology, beijing, china

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Source :

IET Nanodielectrics

Year: 2018

Issue: 1

Volume: 1

Page: 3-16

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 89

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 12

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