A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor - Details

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[ 1 ] [Chen, Gong]Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits MOE, Beijing 100871, Peoples R China
[ 2 ] [Li, Xiaokang]Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits MOE, Beijing 100871, Peoples R China
[ 3 ] [Xu, Xiaoyan]Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits MOE, Beijing 100871, Peoples R China
[ 4 ] [Huang, Ru]Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits MOE, Beijing 100871, Peoples R China
[ 5 ] [Li, Ming]Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits MOE, Beijing 100871, Peoples R China
[ 6 ] [Yu, Bocheng]Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China
[ 7 ] [Li, Zhihong]Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China
[ 8 ] [Dong, Xiaoqiao]Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China

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[Li, Ming]Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits MOE, Beijing 100871, Peoples R China

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SCIENCE CHINA-INFORMATION SCIENCES

ISSN： 1674-733X

Year： 2020

Issue： 6

Volume： 63

8 . 8 0 0

JCR@2022

ESI Discipline： COMPUTER SCIENCE;

ESI HC Threshold：132

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WoS CC Cited Count： 1

SCOPUS Cited Count： 2

ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 9

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