4×15 Gbit/s 850 nm Vertical Cavity Surface Emitting Laser Array - Details

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Abstract：

A　high-speed　modulation　of　4×15　Gbit/s　850　nm　vertical　cavity　surface　emitting　lasers　(VCSEL)　array　with　oxidation　aperture　of　7　μm　and　adjacent　unit　interval　of　250　μm　is　demonstrated.　Its　epitaxy　structure　has　a　strained　multiple　quantum　well　active　region　of　InGaAs/AlGaAs　and　a　double　oxide　confinement　layer　grown　with　the　metal　organic　chemical　vapor　deposition　(MOCVD)　apparatus.　And　in　the　chip　fabrication　process,　a　series　of　technologies　are　used,　such　as　the　breakpoint　monitor　inductively　coupled　plasma　etching　and　the　wet　oxidation　precise　control.　The　static　and　dynamic　characteristics　of　the　VCSEL　array　are　measured.　For　the　single　VCSEL　cell,　the　threshold　current　and　slop　efficiency　are　0.7　mA　and　0.8　W/A,　respectively.　And　the　optical　power　reaches　4.5　mW　at　the　working　current　of　6　mA,　meanwhile　the　voltage　is　2.3　V.　Modulated　by　a　15　Gbit/s　non-return　zero　code　(NRZ),　VCSEL　cells　perform　eye　diagrams　with　clear　profiles,　fine　stitches,　tiny　jitter　and　few　crosstalk.　For　the　eye　diagram　relative　parameters,　such　as　rise　time,　fall　time,　signal-to-noise　ratio,　root　mean　square　jitter　and　so　on,　some　comparisons　are　made　among　VCSEL　cells　in　the　array.　The　results　indicate　that　the　consistency　of　the　dynamic　characteristics　is　good.　In　addition,　the　consistency　of　device　static　characteristics　among　the　VCSEL　cells　in　the　whole　wafer　is　analyzed　through　the　method　of　boxplot.　All　characteristics　show　a　high　consistency,　which　can　meet　the　requirement　of　mass-production.　©　2018,　Chinese　Lasers　Press.　All　right　reserved.

Keyword：

Jitter Gallium compounds Organic lasers Organometallics Industrial chemicals Signal to noise ratio Semiconducting indium gallium arsenide Modulation Metallorganic chemical vapor deposition Quantum well lasers Organic chemicals Semiconductor quantum wells Laser pulses Surface emitting lasers Inductively coupled plasma

Author Community：

[ 1 ] [Lü, Zhaochen]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Wang, Qing]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Yao, Shun]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Zhou, Guangzheng]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Yu, Hongyan]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Li, Ying]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 7 ] [Lang, Luguang]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 8 ] [Lan, Tian]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 9 ] [Zhang, Wenjia]National Key Laboratory of Regional Fiber Communication Network and New Optical Communication System, Shanghai Jiao Tong University, Shanghai; 200030, China
[ 10 ] [Liang, Chenyu]National Key Laboratory of Regional Fiber Communication Network and New Optical Communication System, Shanghai Jiao Tong University, Shanghai; 200030, China
[ 11 ] [Zhang, Yang]Sino Semicondutor Photonic Integrated Circuit Co., Ltd., Taizhou; Jiangsu; 225300, China
[ 12 ] [Zhao, Fengchun]Sino Semicondutor Photonic Integrated Circuit Co., Ltd., Taizhou; Jiangsu; 225300, China
[ 13 ] [Jia, Haifeng]Sino Semicondutor Photonic Integrated Circuit Co., Ltd., Taizhou; Jiangsu; 225300, China
[ 14 ] [Wang, Guanghui]Sino Semicondutor Photonic Integrated Circuit Co., Ltd., Taizhou; Jiangsu; 225300, China
[ 15 ] [Wang, Zhiyong]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China