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Author:

Zhang, Xin (Zhang, Xin.) | Huang, Ting (Huang, Ting.) (Scholars:黄婷) | Xiao, Rongshi (Xiao, Rongshi.) (Scholars:肖荣诗)

Indexed by:

EI Scopus PKU CSCD

Abstract:

The tiny differences of physical performance and chemical performance among monocrystal silicons with various crystal surfaces have great effect on micronano processing results, and the behavior characteristics of different monocrystal silicon surfaces under femtosecond laser irradiation are studied by the electron backscatter diffraction (EBSD) technology. The results indicate that the amorphous region and the etching region are formed on the (111) surface of monocrystal silicon when the energy densities of femtosecond lasers are under and above the damage threshold. However, the etching region is formed only on the (111) surface of monocrystal silicon irradiated by femtosecond lasers with different energies. The femtosecond laser is widely used in micronano processing. The study of the behavior characteristics of different crystal surfaces irradiated by femtosecond laser is beneficial to fabricating novel micronano devices. © 2017, Chinese Lasers Press. All right reserved.

Keyword:

Crystal orientation Femtosecond lasers Irradiation Etching Monocrystalline silicon Amorphous silicon Electron diffraction Backscattering

Author Community:

  • [ 1 ] [Zhang, Xin]High-Power Laser Advanced Manufacturing Laboratory, Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Huang, Ting]High-Power Laser Advanced Manufacturing Laboratory, Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 3 ] [Xiao, Rongshi]High-Power Laser Advanced Manufacturing Laboratory, Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China

Reprint Author's Address:

  • 黄婷

    [huang, ting]high-power laser advanced manufacturing laboratory, institute of laser engineering, beijing university of technology, beijing; 100124, china

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Source :

Chinese Journal of Lasers

ISSN: 0258-7025

Year: 2017

Issue: 1

Volume: 44

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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