An　avalanche　of　research　has　been　carried　out　on　two-dimensional　(2D)　transition　metal　dichalcogenides　(TMDs)　due　to　their　potential　applications　in　advanced　electronics　and　flexible　devices.　To　take　full　use　of　the　emerging　2D　TMDs　materials,　their　in-plane/vertical　heterostructures　have　been　explored,　enabling　effective　tuning　of　their　physical　and　chemical　properties.　However,　structural　differences　between　the　various　phases　impede　the　formation　of　functional　heterostructures.　Therefore,　robust　synthesis　strategies　for　heterostructures　with　different　phases　have　been　explored　in　this　study.　A　chemical　vapor　deposition　process　has　been　proposed　in　which　the　key　parameters　like　reaction　sources　and　deposition　sites　have　been　carefully　adjusted,　trying　to　achieve　simultaneous　synthesis　of　1T′/2H　in-plane　and　vertical　heterostructures.　Consequently,　2D　in-plane　RexMo1-xS2/MoS2　and　vertical　ReS2/MoS2　heterostructures　have　been　produced　in　different　regions　at　the　same　time.　Atomic-resolution　Z-contrast　images　reveal　the　detailed　atomic　structure　of　the　1T′/2H　interfaces.　The　lateral　interface　is　found　to　contain　Mo　atoms　with　only　5-fold　coordination　with　S　due　to　the　phase　mismatch.　This　work　demonstrates　a　route　to　exploit　heterostructures　of　different　phases　and　opens　the　possibility　to　build　more　complicated　2D　heterostructures　using　CVD.　©　2022　The　Author(s).　Published　by　Oxford　University　Press.