In　order　to　study　the　performance　of　GaN　schottky　barrier　diodes　(SBD)　with　different　structures,　the　forward　and　reverse　characteristics　of　GaN　SBD　with　original,　hybrid　anode　and　gate　controlled　edge　terminal　(GET)　are　simulated,　and　the　effects　of　the　structural　parameters　of　each　device　on　the　electrical　characteristics　are　compared.　The　simulation　results　show　that　the　turn-on　voltage　of　hybrid　anode　GaN　SBD　is　the　lowest　(0.74V),The　forward　current　is　the　largest,　the　breakdown　voltage　is　in　the　middle.　The　turn-on　voltage　of　GET　GaN　SBD　is　in　the　middle,　and　the　forward　current　is　lower　than　that　of　original　structure,　but　the　breakdown　voltage　is　the　highest,　reaching　1586V.　Comprehensively　considered,　the　performance　of　GET　GaN　SBD　is　the　best.　©　2021　IEEE.